Research Article
The Design and Process Reliability Analysis of Millimeter Wave CMOS Power Amplifier with a Cold Mode MOSFET Linearization
Table 2
Comparison of key parameters with existing power amplifier designs.
| | Ref. | Process node (nm) | Freq (GHz) | Gain (dB) | OIP1-dB (dBm) | PAE (%) | Psat (dBm) | Results |
| | Khan and Wahab [1] | 130 | 24 | 6 | – | 30 | 12.5 | Simulated | | Portela et al. [4] | 180 | 24 | 16.2 | 13.6 | 22.5 | 17.5 | Simulated | | Jen et al. [5] | 180 | 27 | 14.5 | – | 13.2 | 14 | Measured | | Chang et al. [8] | 130 | 24 | 12.2 | – | 20.5 | 17.5 | Simulated | | Kuo et al. [9] | 180 | 22 | 11.9 | 14.3 | 10.7 | 16.8 | Measured | | Tsai et al. [14] | 90 | 60 | 9.8 | 10.2 | 11.4 | 10.7 | Measured | | Koo et al. [24] | 130 | 24 | 15.6 | 13.3 | 17.7 | 16 | Measured | | Shang et al. [34] | 45 | 24 | 18.6 | – | 39.7 | 22.4 | Measured | | Ciocoveanu et al. [35] | 150 GaAs | 33–37 | 18 | – | – | 26.7 | Simulated | | This work | 65 | 28 | 21.1 | 18.6 | 17 | 22.4 | Extracted |
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